View SKW30N60_1309926.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SKW30N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-247-3-1 (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Tj , Tstg -55...+150 C
1)
VCE 600V
IC 30A
VCE(sat) 2.5V
Tj 150C
Package TO-247AC
Ordering Code Q67040-S4244
Symbol VCE IC
Value 600 41 30
Unit V A
ICpul s IF
112 112
41 30 IFpul s VGE tSC Ptot 112 20 10 250 V s W
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKW30N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 3 0 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA TO-247AC
0.5 1 40
K/W
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 2.1 2.5 1.4 1.25 4 20 1600 150 92 140 13 300 max. 2.4 3.0 1.8 1.65 5
Unit
V
A 40 3000 100 1920 180 110 182 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 30 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =3 0 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
SKW30N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 2 00 V , I F = 3 0 A, d i F / d t =2 0 0 A/ s 400 32 368 610 5.5 180 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G =11 , 1) L = 18 0 nH , 1) C = 90 0 pF Energy losses include "tail" and diode reverse recovery. 44 34 291 58 0.64 0.65 1.29 53 40 349 70 0.77 0.85 1.62 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 2 00 V , I F = 3 0 A, d i F / d t =2 0 0 A/ s 520 56 464 1740 9.0 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 1 1 , 1) L = 18 0 nH , 1) C = 90 0 pF Energy losses include "tail" and diode reverse recovery. 44 34 324 67 0.98 0.92 1.90 53 40 389 80 1.18 1.19 2.38 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Jul-02
SKW30N60
160A
Ic
140A 120A
100A
tp=4s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
100A 80A TC=80C 60A 40A 20A 0A 10Hz TC=110C
10A
50s 200s 1ms
1A DC
Ic
0.1A 1V 10V 100V
100Hz
1kHz
10kHz
100kHz
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
300W
60A
250W
50A
Limited by bond wire
200W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
40A
150W
30A
100W
20A
50W
10A
0W 25C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Jul-02
SKW30N60
90A 80A 70A 90A 80A 70A
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V
IC, COLLECTOR CURRENT
VGE=20V 15V 13V 11V 9V 7V 5V
60A 50A 40A 30A 20A 10A 0A 0V
VGE=20V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
90A 80A
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
100A
4.0V
3.5V
IC = 60A
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 0V
3.0V
2.5V
IC = 30A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V -50C 0C 50C 100C 150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Jul-02
SKW30N60
1000ns
1000ns td(off)
td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
tf
100ns
tf td(on) tr
td(on) tr
10ns 10A 20A 30A 40A 50A 60A
10ns 0
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
1000ns
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V typ. max.
td(off)
t, SWITCHING TIMES
100ns tf tr td(on)
min.
10ns 0C
50C
100C
150C
-50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
6
Jul-02
SKW30N60
5.0mJ 4.5mJ
*) Eon and Ets include losses due to diode recovery.
4.0mJ
Ets*
3.5mJ
*) Eon and Ets include losses due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4.0mJ 3.5mJ 3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 10A 20A 30A 40A 50A 60A 70A Eon* Eoff
3.0mJ 2.5mJ 2.0mJ 1.5mJ 1.0mJ 0.5mJ 0.0mJ 0 Eoff Eon* Ets*
10
20
30
40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 30A, Dynamic test circuit in Figure E)
3.0mJ
10 K/W
0
2.5mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
D=0.5
-1
E, SWITCHING ENERGY LOSSES
0.2 0.1 0.05 0.02
10 K/W
2.0mJ
Ets*
1.5mJ
10 K/W 0.01
-2
1.0mJ
Eon* Eoff
10 K/W
-3
R,(1/W) 0.3681 0.0938 0.0380
R1
, (s)= 0.0555 1.26*10-3 1.49*10-4
R2
0.5mJ
single pulse
C 1= 1/R 1 C 2= 2/R 2
0.0mJ 0C
50C
100C
150C
10 K/W 1s
-4
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 30A, RG = 11, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Jul-02
SKW30N60
25V
20V
120V 480V
1nF
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
C, CAPACITANCE
Coss 100pF Crss
10V
5V
0V 0nC
50nC
100nC
150nC
200nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 30A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
500A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
450A 400A 350A 300A 250A 200A 150A 100A 50A 0A 10V 12V 14V 16V 18V 20V
tsc, SHORT CIRCUIT WITHSTAND TIME
15 s
10 s
5 s
0 s 10V
11V
12V
13V
14V
15V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Jul-02
SKW30N60
700ns
3500nC
600ns
3000nC
Qrr, REVERSE RECOVERY CHARGE
IF = 60A
trr, REVERSE RECOVERY TIME
500ns
2500nC
IF = 60A IF = 30A
400ns
IF = 30A
2000nC
300ns
1500nC
IF = 15A
200ns
IF = 15A
1000nC
100ns
500nC
0ns 100A/s
300A/s
500A/s
700A/s
900A/s
0nC 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
24A
1000A/s
20A
d i r r /d t, DIODE PEAK RATE OF FALL
16A
IF = 60A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
800A/s
600A/s
12A
IF = 30A IF = 15A
400A/s
8A
200A/s
4A
0A 100A/s
300A/s
500A/s
700A/s
900A/s
0A/s 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
9
Jul-02
SKW30N60
60A
2.0V
50A
I F = 60A VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
40A 150C 30A 100C 20A 25C 10A -55C
1.5V
I F = 30A
0A 0.0V
0.5V
1.0V
1.5V
2.0V
1.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
10 K/W D=0.5 0.2 10 K/W
-1
0
0.1 0.05 0.02
10 K/W single pulse
-2
0.01
R,(1/W) 0.270 0.231 0.221 0.203 0.070
R1
, (s)= 0.157 2.08*10-2 2.29*10-3 2.04*10-4 1.03*10-5
R2
C1= 1/R1
C 2 = 2 /R 2
10 K/W 1s
-3
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
10
Jul-02
SKW30N60
TO-247AC
symbol min A B C D E F G H K L M N P Q 6.12 4.78 2.29 1.78 1.09 1.73 2.67 [mm]
dimensions [inch] max 5.28 2.51 2.29 1.32 2.06 3.18 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.22
0.1421 0.2409 0.2449
11
Jul-02
SKW30N60
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =900pF.
Published by Infineon Technologies AG,
12
Jul-02
SKW30N60
Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Jul-02

▲Up To Search▲

Price & Availability of SKW30N60

	To Download SKW30N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .